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parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 34 i c @ t c = 100c continuous collector current 18 a i cm pulsed collector current 68 i lm clamped inductive load current 68 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 10 mj p d @ t c = 25c maximum power dissipation 100 p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) IRG4BC30S-SPBF standard speed igbt insulated gate bipolar transistor e c g n-channel features standard: optimized for minimum saturation voltage and low operating frequencies (< 1khz) generation 4 igbt design provides tight parameter distribution and high efficiency lead-free generation 4 igbts offer highest efficiency available igbts optimized for specified application conditions benefits v ces = 600v v ce(on) typ. = 1.4v @v ge = 15v, i c = 18a parameter typ. max. units r jc junction-to-case ??? 1.2 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient, typical socket mount ??? 40 wt weight 1.44 ??? g (oz) thermal resistance absolute maximum ratings w 8/30/04 www.irf.com 1 d 2 pak pd - 95786

2 www.irf.com pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature (see fig. 13b). v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 23 ? , (see fig. 13a). repetitive rating; pulse width limited by maximum junction temperature. parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 ? ? v v ge = 0v, i c = 1.0a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.75 ? v/c v ge = 0v, i c = 1.0ma ? 1.40 1.6 i c = 18a v ge = 15v v ce(on) collector-to-emitter saturation voltage ? 1.84 ? i c = 34a see fig. 2, 5 ? 1.45 ? i c = 18a , t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -11 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 6.0 11 ? s v ce = 100v, i c = 18a ? ? 250 v ge = 0v, v ce = 600v ? ? 2.0 v ge = 0v, v ce = 10v, t j = 25c ? ? 1000 v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current a parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 50 75 i c = 18a q ge gate - emitter charge (turn-on) ? 7.3 11 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ? 17 26 v ge = 15v t d(on) turn-on delay time ? 22 ? t r rise time ? 18 ? t j = 25c t d(off) turn-off delay time ? 540 810 i c = 18a, v cc = 480v t f fall time ? 390 590 v ge = 15v, r g = 23 ? e on turn-on switching loss ? 0.26 ? energy losses include "tail" e off turn-off switching loss ? 3.45 ? mj see fig. 9, 10, 14 e ts total switching loss ? 3.71 5.6 t d(on) turn-on delay time ? 21 ? t j = 150c, t r rise time ? 19 ? i c = 18a, v cc = 480v t d(off) turn-off delay time ? 790 ? v ge = 15v, r g = 23 ? t f fall time ? 760 ? energy losses include "tail" e ts total switching loss ? 6.55 ? mj see fig. 11, 14 l e internal emitter inductance ? 7.5 ? nh measured 5mm from package c ies input capacitance ? 1100 ? v ge = 0v c oes output capacitance ? 72 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 13 ? ? = 1.0mhz switching characteristics @ t j = 25c (unless otherwise specified) ns ns

www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j o t = 150 c j o 0.1 1 10 100 5 6 7 8 9 10 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j o t = 150 c j o
0 1 0 2 0 3 0 4 0 5 0 0.1 1 10 10 0 f, frequency (khz) a 60% of rated voltage i ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j triangular wave: i clamp voltage: 80% of rated power dissipation = w

4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 9 c i = a 18 c i = a 36 c 25 50 75 100 125 150 0 5 10 15 20 25 30 35 t , case temperature ( c) maximum dc collector current(a) c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = 23ohm v = 15v v = 480v g ge cc i = a 36 c i = a 18 c i = a 9 c ? 1 10 100 0 500 1000 1500 2000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 18a cc c 0 10 20 30 40 50 3.60 3.64 3.68 3.72 3.76 3.80 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 18a cc ge j c ?

6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa 0 10 20 30 40 50 0.0 3.0 6.0 9.0 12.0 15.0 i , collector-to-emitter current (a) total switching losses (mj) c r = 23ohm t = 150 c v = 480v v = 15v g j cc ge ? 1 10 100 1000 1 10 100 100 0 v = 20v t = 125 c ge j o v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c safe operating area

www.irf.com 7 480v 4 x i c @ 25c d.u.t. 50v l v * c * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v r l = t=5 s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) fig. 14b - switching loss waveforms 5 0v driver* 1000v d.u.t . i c c v l ig. 14a - switching loss test circuit driver same type as d.u.t., vc = 480v

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dimensions are shown in millimeters (inches) note: "p" in assembly line pos iti on indicates "l ead-f ree" f 530s t his is an irf 530s wit h lot code 8024 as s embled on ww 02, 2000 in the assembly line "l" as s e mb l y lot code int e rnat ional re ct if ie r logo part numbe r dat e code ye ar 0 = 2000 we e k 02 line l f530s a = assembly site code we e k 0 2 p = des ignates lead-fre e product (opt ional) rect ifier int ernational logo lot code assembly year 0 = 2000 dat e code part number

www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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